PART |
Description |
Maker |
TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位)的CMOS闪存EEPROM的(32M的8位与非的EEPROM
|
Toshiba Corporation Toshiba, Corp.
|
S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc. Advanced Micro Devices, Inc. Spansion, Inc. http://
|
MC-242443F9-B10-BT3 MC-242443F9-B90-BT3 |
MCP(32M-bit flash memory 16M-bit mobile specified RAM)
|
NEC
|
MB82DP02183C-65LWT MB82DP02183C-65L MB82DP02183C-6 |
32M Bit (2 M word 】 16 bit) Mobile Phone Application Specific Memory
|
FUJITSU[Fujitsu Media Devices Limited]
|
MB82DP02183D-65LWT |
32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Component Limited.
|
MB82DBS04163C MB82DBS04163C-70L MB82DBS04163C-70LW |
MEMORY Mobile FCRAMTM CMOS 64 M Bit (4 M word】16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Media Devices Limited
|
M6MGD137W34DWG |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
IBM13M32734BCB |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2,银行注册内存模块(32M × 72配置2组寄存同步动态内存模块)
|
International Business Machines, Corp.
|
TC58NS256ADC |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia)
|
TOSHIBA
|
M6MGD13TW34DWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP) 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
TC58V32FT |
32M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|